Methods of forming switchable circuit devices

ABSTRACT

The invention includes a switchable circuit device. The device comprises a first conductive layer and a porous silicon matrix over the first conductive layer. A material is dispersed within pores of the porous silicon matrix, and the material has two stable states. A second conductive layer is formed over the porous silicon matrix. A current flow between the first and second conductive layers is influenced by which of the stable states the material is in.

TECHNICAL FIELD

The invention pertains to switchable circuit devices, and methods offorming switchable devices. In particular applications, the inventionpertains to semiconductor constructions comprising switchable circuitdevices.

BACKGROUND OF THE INVENTION

Various molecular switches have been developed within the past severalyears. The molecular switches are characterized by having two stablestates which can be interchanged with one another. Exemplary molecularswitches include redox-active catenanes, redox-active rotaxanes, andredox-active pseudorotaxanes. The molecular switches can be, forexample, materials which can be interchanged between two stable statesby oxidation and reduction. The oxidation and reduction of a materialcan be accomplished by, for example, altering a voltage that thematerial is exposed to.

In referring to this disclosure and the claims which follow, a preferredexemplary switchable material is referred to as a “molecular switchablememory material”, with the term “memory” emphasizing that the materialhas at least two stable and interchangeable states. It is possible thata memory material can have more than two stable states, but generally itis preferred that the material have only two stable states accessible inthe particular environment that the material is utilized in. Forinstance, a material having multiple stable states accessible throughredox reactions can be utilized in an environment wherein a voltage tothe material is controlled such that only two of the stable states areaccessed during utilization of the material as an active molecularswitch.

In theory, the molecular switches can be incorporated into switchablecircuit devices. Specifically, one of the stable states of a molecularswitch can be referred to as a “1” digital state, and the other stablestate can be referred to as a “0”. Accordingly, a circuit devicecomprising a molecular switch material can be switchable between a firststate corresponding to the “0” and a second state corresponding to the“1”. The two states can be utilized for storing memory bits.Additionally, and/or alternatively, one of the stable states of aswitchable molecular material can be referred to as an “on state” andthe other as an “off state,” and the material can be utilized to controlelectrical flow within a circuit. Specifically, when the material is inthe “on state” electrical flow can proceed through the circuit, and whenthe material is switched to the “off state”, electrical flow can bestopped within the circuit.

Various difficulties are encountered in attempting to incorporate thatthe switchable molecular material can be destroyed when incorporatedinto the circuit, and accordingly will no longer act as a molecularswitch. For purposes of interpreting this disclosure and the claims thatfollow, an “active’ molecular switch is defined as a molecule whichretains an ability to switch from one stable state to another.

It would be desirable to develop new circuit structures incorporatingmolecular switches, and to develop new methods of forming circuitstructures comprising molecular switches.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a method of forming aswitchable circuit device. A mass is formed over a substrate, and whilethe mass is over the substrate pores are formed within the mass toconvert the mass to a porous matrix. An active molecular switchablememory material is provided within the pores of the porous matrix. Anelectrical connection is formed to the porous matrix.

In another aspect, the invention encompasses a method wherein a firstconductive wiring layer is formed to be supported by semiconductorsubstrate. Porous silicon is formed over the conductive wiring layer,and an active molecular switchable memory material is formed withinpores of the porous silicon. A second conductive wiring layer is formedover the porous silicon.

In one aspect, the invention encompasses a switchable circuit devicecomprising a porous silicon matrix and an active molecular switchablememory material within the porous silicon matrix.

In one aspect, the invention encompasses a switchable circuit devicecomprising a first conductive layer and a porous silicon matrix over thefirst conductive layer. A material is dispersed within pores of theporous silicon matrix, and the material has two stable states. A secondconductive layer is formed over the porous silicon matrix. A currentflow between the first and second conductive layers is influenced bywhich of the stable states the material is in.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a fragment of aconstruction at a preliminary processing stage of a method in accordancewith one aspect of the present invention.

FIG. 2 is a view of the FIG. 1 fragment shown at a processing stagesubsequent to that of FIG. 1.

FIG. 3 is a view of the FIG. 1 fragment shown at a processing stagesubsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 1 fragment shown at a processing stagesubsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 1 fragment shown at a processing stagesubsequent to that of FIG. 4.

FIG. 6 is a view of the FIG. 1 fragment shown at a processing stagesubsequent to that of FIG. 5.

FIG. 7 is a top view of the construction of FIG. 6.

FIG. 8 is a diagrammatic, cross-sectional view of a fragment of aconstruction at a preliminary processing stage of a second embodimentmethod of the present invention.

FIG. 9 is a view of the FIG. 8 fragment shown at a processing stagesubsequent to that of FIG. 8.

FIG. 10 is a view of the FIG. 8 fragment shown at a processing stagesubsequent to that of FIG. 9.

FIG. 11 is a view of the FIG. 8 fragment shown at a processing stagesubsequent to that of FIG. 10.

FIG. 12 is a view of the FIG. 8 fragment shown at a processing stagesubsequent to that of FIG. 11.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An exemplary aspect of the invention is described with reference toFIGS. 1-7. Referring initially to FIG. 1, a construction 10 isillustrated at a preliminary processing stage. Construction 10 comprisesa substrate 12 having an electrically insulative material 14 thereover.Substrate 12 can comprise, for example, monocrystalline silicon. To aidin interpretation of the claims that follow, the terms “semiconductivesubstrate” and “semiconductor substrate” are defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

Various circuit components (not shown) can be associated with substrate12. Such components can be, for example, formed over a monocrystallinesilicon mass and under the insulative material 14. Accordingly,substrate 12 can comprise numerous materials and structures which arenot shown in the diagram of FIG. 1.

Insulative material 14 can comprise, for example, borophosphosilicateglass. A series of trenches 16 extend into insulative material 14.Trenches 16 can be formed by conventional processing, such as, forexample, methods utilizing photolithographic processing. Insulativematerial 14 has an uppermost surface 17 extending between trenches 16.

Referring to FIG. 2, a conductive material is formed within trenches 16to form wiring layers 11, 13 and 15. In particular embodiments, trenches16 extend into and out of the page containing FIG. 2, and accordinglythe wiring layers extend along the direction which is into and out ofthe page. The conductive material utilized in layers 11, 13 and 15 canbe referred to as a first conductive wiring layer. Wiring layers 11, 13and 15 can comprise any suitable conductive material, and in particularapplications will comprise conductively-doped silicon, such as, forexample, silicon which is doped to a concentration of at least about1×10²⁰ atoms/cm³ with a suitable dopant material. It can be preferred toutilize an n-type dopant in particular aspects of the invention. Ifwiring layers 11, 13 and 15 comprise conductively-doped silicon, thesilicon can be, for example, one or both of amorphous andpolycrystalline in physical character.

Wiring layers 11, 13 and 15 can be formed within trenches 16 by variousprocesses. An exemplary process is to form a conductive material overupper surface 17 of insulative material 14, as well as within trenches16; and to subsequently remove the material from over upper surface 17,as well as from within upper portions of trenches 16, with a suitableetch. Although conductive material of layers 11, 13 and 15 is shown onlypartially filling trenches 16, it is to be understood that the inventionencompasses other aspects (not shown) in which the conductive materialcompletely fills trenches 16.

Referring to FIG. 3, a mass 20 is formed over insulative material 14 andwithin trenches 16. Mass 20 can comprise, for example, silicon, and inparticular aspects will consist essentially of silicon, or consist ofsilicon having one or more dopant materials dispersed therein. The typeof silicon utilized within mass 20 can be, for example, eitheramorphous, or polycrystalline. It can be preferred that mass 20 comprisesilicon doped with p-type material, such as, for example, boron.

Referring to FIG. 4, mass 20 is removed from over uppermost surfaces 17of insulative material 14, to leave portions of the mass remainingwithin trenches 16. The remaining mass has pores 21 (only some of whichare labeled) formed therein.

Mass 20 can be removed from over uppermost surfaces 17 of insulativematerial 14 by, for example, chemical-mechanical polishing. Such forms aplanarized upper surface 23 which extends across uppermost remainingsurfaces of insulative material 14 and mass 20. It is noted that pores21 can surface extending across the remaining material 20. However, thesurface 23 can still be considered to be generally planar acrossuppermost expanses of both insulative mass 14 and remaining material 20.It is further noted that if material 20 is removed from over anuppermost surface of mass 14 by chemical-mechanical planarization, suchcan remove some of the uppermost surface of material 14. Accordingly,the uppermost surface 17 of FIG. 4 may be at a reduced elevational levelrelative to the uppermost surface 17 shown in FIG. 3.

Pores 21 can be formed by, for example, exposing a silicon-containingmass 20 to hydrochloric acid during electrochemical anodization, asdiscussed in, for example, U.S. Pat. No. 6,187,604. Such anodization canselectively form pores within p-type doped silicon relative to n-typedoped silicon. Accordingly, if both mass 20 and the conductive layer oflines 11, 13 and 15 comprise conductively-doped silicon, it can bepreferred that mass 20 comprise p-type doped silicon and the conductivelines comprise n-type doped silicon. Accordingly, pores 21 will beselectively formed within mass 20 relative to the conductive lines 11,13 and 15.

The formation of pores 21 within mass 20 converts mass 20 to a porousmatrix, and the formation of pores 21 can occur either before or afterremoval of mass 20 from over an upper surface of insulative material 14.

Although silicon can be used as an exemplary material 20, it is to beunderstood that material 20 can comprise other components eitheralternatively to, or in addition to, silicon. Suitable components are,for example, those which enable a porous matrix to be formed over theconductive material of wiring layers 11, 13 and 15. Particularlysuitable materials can be those which enable the porous matrix to beformed within a trench 16 to create a structure analogous to that shownin FIG. 4.

Referring to FIG. 5, a molecular switchable material 30 is providedwithin pores 21 of the porous matrix 20. The molecular switchablematerial can partially fill, or entirely fill, the pores in a finishedconstruction comprising the material within the pores. In a partialfill, by way of example only, the switchable material might only coatsidewall portions of the pores. The molecular switchable material ispreferably an “active” molecular switchable memory material as formedwithin the pores 30. For purposes of interpreting this disclosure andthe claims which follow, an “active” molecular switchable memorymaterial is defined as a material which is in a proper form andenvironment to switch between at least two stable states. A material maybe, by way of example, initially deposited in an inactive form, and thenconverted to an active form by chemically modifying the material and/orby altering electrical or other properties of an environment around thematerial. Suitable molecular switchable memory materials include, forexample, redox-active catenanes, redox-active rotaxanes, andredox-active pseudorotaxanes.

The active molecular switchable memory material can be provided withinpores 21 by the following exemplary process. Initially, a mixture isformed comprising active molecular switchable memory material within aliquid carrier. Such mixture is provided within the pores 21 of porousmatrix material 20. Subsequently, at least some of the carrier isvolatilized from the pores to leave the active molecular switchablememory material remaining within the pores. It can be preferred that allof the carrier is volatilized from within the pores. Volatilization ofthe carrier from pores 21 can be enhanced by one or more of reducing apressure within the pores (for example, placing construction 10 within avacuum chamber), flowing a purge gas across construction 10, or heatingconstruction 10.

The mixture of active molecular switchable material and liquid carriercan be initially provided within pores 21 by, for example, dippingconstruction 10 into a vat of the mixture, spraying the mixture across asurface of construction 10, and/or other processes whereby the mixtureis applied to porous matrix material 20.

Referring to FIG. 6, a wiring layer 40 is formed over porous matrixmaterial 20 and the molecular switchable material 30 within the pores ofporous matrix 20. Wiring layer 40 can comprise any suitable electricallyconductive material, including, for example, metals and/orconductively-doped silicon.

Conductive wiring layer 40 is formed across planarized upper surface 23.Accordingly, in the shown aspect of the invention porous matrix 20physically contacts the wiring layers 11, 13 and 15 beneath the matrixand the wiring layer 40 above the matrix. The wiring lines at the topand bottom of the porous matrix material 20 can be considered to formelectrical connections to the porous matrix material having theswitchable memory material therein.

Porous matrix material 20 can be considered to comprise a pair ofopposing sides, with one of the sides being a bottom side and the otherbeing a top side. Conductive lines 11, 13 and 15 can considered to bealong the bottom side of matrix material 20; and conductive line 40 canbe considered to be along the top side of the matrix material. Inoperation, current flow between conductive lines on the top and bottomsides of the matrix material 20 goes through the switchable memorymaterial 30. Preferably, if matrix material 20 comprises doped silicon,a dopant level within matrix material 20 is low enough so that thematrix of material 20 does not form an electrically conductiveconnection between lines on opposing sides of material 20.

Molecular switchable material 30 will preferably have at least twostable states, and the current flow between lines on the top and bottomof matrix material 20 will preferably depend on which of the stablestates that the switchable material is in. In particular applications,the switchable material can have only two stable states that areaccessible under the conditions in which the molecular switchablematerial is utilized. The states can be referred to as a “0” and “1”digit state. Accordingly, current flow between lines on opposing sidesof matrix material 20 can be utilized to determine which of the twostable states the molecular switchable material 30 is in. Additionally,if the molecular switchable material 30 comprises a material in whichthe two stable states can be interchanged by oxidation and reduction ofthe material, it is possible that the two stable states can beinterchanged by changing a voltage that the material is exposed to.Accordingly, a state within material 30 can be selected by applying aparticular voltage to material 30, and the state can subsequently bedetermined by measuring current flow between lines on opposing sides ofmatrix material 20.

In a particular aspect of the invention, the material 30 between lines11 and 14 can be considered to be comprised by a first memory cell 50,the material 30 between line 13 and line 40 can be considered to becomprised by a second memory cell 52, and the material 30 between line15 and line 40 can be considered to be comprised, by a third memory cell54. The construction of FIG. 6 can thus be utilized in forming memorydevices, with information being written to material 30 by controlling avoltage relative to individual memory devices, and with informationbeing read from material 30 by ascertaining current flow between aconductive line (11, 13 or 15) and line 40 relative to a particulardevice.

FIG. 7 illustrates a top view of the FIG. 6 construction. Such showsconductive lines 11, 13 and 15 extending substantially parallel to oneanother, and along a first general direction; and further showsconductive line 40 extending along a second direction which issubstantially perpendicular to the direction of lines 11, 13 and 15. Thesecond direction is referred to as being “substantially” perpendicularto indicate that the line is perpendicular within errors of fabricationand measurement. The memory cells 50, 52 and 54 described above withreference to FIG. 6 occur at intersections of lines 11, 13 and 14,respectively, with line 40. The lines 11, 13 and 15 are illustrated inphantom view underlying 40 to illustrate the locations of the memorycells. The memory cells can be considered to be part of an array.

Methodology described herein can have numerous applications. FIGS. 6 and7 illustrate an exemplary application wherein the methodology isutilized to form memory cells. In other applications, the molecularswitchable material 30 can be utilized in forming an on/off switch. Forinstance the material 30 shown in FIG. 6 between lines 15 and 40 cancomprise a material which has a first state that allows current flowbetween lines 15 and 40, and a second state which substantially stopscurrent flow between lines 15 and 40. Accordingly, the material can beset in the first state when current flow is desired between lines 15 and40, and can then be switched to the second state effectively turn offcurrent flow between lines 15 and 40. Although the “on” and “off” statescan be assigned digit values of 0 and 1, and accordingly the material 30could be utilized in the memory device, there are numerous otherapplications for utilizing an on/off switch for which methodology of thepresent invention can be suitable.

A second embodiment method of the present invention is described withreference to FIGS. 8-12. Referring initially to FIG. 8, a fragment of aconstruction 100 is illustrated. Construction 100 includes asemiconductive material substrate 102 having a patterned mask 104thereover. Substrate 102 can comprise, for example, monocrystallinesilicon. Patterned mask 104 can comprise, for example, photoresist, andcan be patterned utilizing photolithographic processing.

A series of openings 106, 108 and 110 extend through mask 104 and tosubstrate 102.

Referring to FIG. 9, a dopant 112 is implanted through openings 106, 108and 110, and into substrate 102 to form conductively-doped regions 114,116 and 118. Dopant 112 is preferably an n-type dopant (such as, forexample, arsenic or phosphorous), and is preferably implanted intosubstrate 102 to a depth such that an upper surface ofconductively-doped regions 114, 116 and 118 is below an uppermostsurface of substrate 102, as shown. Conductively-doped regions 114, 116and 118 can be formed as lines extending into and out of the page, andaccordingly can constitute wiring layers extending within substrate 102.In particular aspects, conductively-doped regions 114, 116 and 118 canbe considered conductive wiring layers supported by substrate 102.

Referring to FIG. 10, masking layer 104 (FIG. 9) is replaced by amasking layer 120 which defines openings 122, 124 and 126 overlappingthe previous locations of openings 106, 108 and 110, respectively (FIG.9). Masking layer 120 can be formed by reducing a lateral size ofprevious masking layer 104, or by entirely removing masking layer 104and replacing it with a new masking layer. It is to be understood thatthe replacement of masking layer 104 with masking layer 120 is apreferred aspect of the invention, and the invention encompasses otherembodiments (not shown) where masking layer 104 is left in place andunaltered for the processing of FIG. 10.

A dopant 128 is implanted into substrate 102 to form doped regions 130,132 and 134 over conductively-doped regions 114, 116 and 118,respectively. Dopant 128 will preferably comprise a p-type dopant (suchas, for example, boron), and accordingly doped regions 130, 132 and 134will be p-type doped regions.

An advantage of utilizing a mask 120 which defines larger openings 122,124 and 126 than the openings 106, 108 and 110 utilized for theprocessing of FIG. 9, is that p-type doped regions 130, 132 and 134 willextend outwardly beyond lateral peripheries of n-type-doped conductivenodes 114, 116 and 118. In subsequent processing described below, aconductive wiring layer can be formed over regions 130, 132 and 134, andconnected to conductively-doped regions 114, 116 and 118 through regions130, 132 and 134. By having lateral peripheries of regions 130, 132 and134 extend outwardly beyond lateral peripheries of regions 114, 116 and118, shorting around regions 130, 132 and 134 can be avoided, and eveneliminated.

Referring to FIG. 11, mask 120 (FIG. 10) is removed, and p-type dopedregions 130, 132 and 134 are converted to porous silicon. Such can bereference to FIG. 4. In the shown embodiment, the porous siliconphysically contacts conductively-doped regions 114, 116 and 118.

Referring next to FIG. 12, an active molecular switchable memorymaterial 135 is formed within the pores of the porous silicon, andsubsequently a conductive line 136 is formed over regions 130, 132 and134. The structure of FIG. 12 is comparable to the structure describedpreviously with reference to FIG. 6. Accordingly, the structure of FIG.12 can be considered to comprise memory cells.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A method of forming a switchable circuit device,comprising forming a mass over a substrate; while the mass is over thesubstrate, forming pores within the mass to convert the mass to a porousmatrix; providing an active molecular switchable memory material withinthe pores of the porous matrix; and forming an electrical connection tothe porous matrix having the switchable memory material therein.
 2. Themethod of claim 1 wherein the active molecular switchable memorymaterial substantially completely fills the pores of the porous matrixin a finished construction.
 3. The method of claim 1 wherein the activemolecular switchable memory material only partially tills the pores ofthe porous matrix in a finished construction.
 4. The method of claim 1wherein the active molecular switchable memory material comprises twostable states which can be interchanged with one another throughreduction and oxidation.
 5. The method of claim 1 further comprisingutilizing the active molecular switchable memory material underconditions in which only two stable states of the material areinterchanged with one another.
 6. The method of claim 5 wherein the twostable states are interchanged with one another through oxidation andreduction.
 7. The method of claim 1 wherein the substrate is asemiconductor substrate.
 8. The method of claim 1 wherein the masscomprises silicon.
 9. The method of claim 1 wherein the mass consistsessentially of silicon.
 10. The method of claim 1 wherein the massconsists of silicon having one or more dopant materials dispersedtherein.
 11. The method of claim 1 wherein the active molecularswitchable memory material comprises a redox-active catenane.
 12. Themethod of claim 1 wherein the active molecular switchable memorymaterial comprises a redox-active rotaxane.
 13. The method of claim 1wherein the active molecular switchable memory material comprises aredox-active pseudorotaxane.
 14. A method of forming a switchablecircuit device, comprising providing a semiconductive materialsubstrate; forming at least one n-type doped region within the substrateand beneath an uppermost surface of the substrate; forming at least oneporous matrix over the at least one n-type doped region; providing anactive molecular switchable memory material within the pores of the atleast one porous matrix; and forming a conductive line over and inelectrical contact with the at least one porous matrix having theswitchable memory material therein.
 15. The method of claim 14 whereinthe at least one porous matrix is in physical contact with the at leastone n-type doped region.
 16. The method of claim 14 wherein thesemiconductive material of the substrate comprises monocrystallinesilicon.
 17. The method of claim 14 wherein the active molecularswitchable memory material comprises a redox-active catenane.
 18. Themethod of claim 14 wherein the active molecular switchable memorymaterial comprises a redox-active rotaxane.
 19. The method of claim 14wherein the active molecular switchable memory material comprises aredox-active pseudorotaxane.
 20. The method of claim 14 wherein theforming the at least one porous matrix comprises: implanting a p-typedopant into the substrate to form at least one p-type doped region overthe at least one n-type doped region; and converting the at least onep-type doped region into the at least one porous matrix.
 21. The methodof claim 20 wherein the at least one p-type doped region has a lateralperiphery which extends laterally outward beyond a lateral periphery ofthe at least one n-type doped region.
 22. A method of forming aswitchable circuit device, comprising forming a mass over a substrate;while the mass is over the substrate, forming pores within the mass toconvert the mass to a porous matrix; providing a mixture of activemolecular switchable memory material within liquid carrier; providingthe mixture within the pores of the porous matrix material; volatilizingthe carrier from within the pores to leave the active molecularswitchable memory material remaining within the pores; providing anactive molecular switchable memory material within the pores of theporous matrix; and forming an electrical connection to the porous matrixhaving the switchable memory material therein.
 23. The method of claim22 wherein the active molecular switchable memory material substantiallycompletely fills the pores of the porous matrix in a finishedconstruction.
 24. The method of claim 22 wherein the active molecularswitchable memory material only partially fills the pores of the porousmatrix in a finished construction.
 25. The method of claim 22 whereinthe providing the mixture within the pores of the porous matrix materialcomprises dipping the porous matrix material into the mixture.
 26. Amethod of forming a switchable circuit device, comprising; providing asemiconductor substrate; forming a first conductive wiring layersupported by the substrate; forming porous silicon over the conductivewiring layer; providing an active molecular switchable memory materialwithin pores of the porous silicon; and forming a second conductivewiring layer over the porous silicon and over the active molecularswitchable memory material within the pores of the porous silicon. 27.The method of claim 26 wherein the substrate comprises monocrystallinesilicon, and wherein the first conductive wiring layer comprises ann-type doped region extending within the monocrystalline silicon of thesubstrate.
 28. The method of claim 26 further comprising: forming anelectrically Insulative layer over the semiconductor substrate; formingtrenches within the electrically insulative layer; and forming the firstconductive wiring layer within the trenches.
 29. The method of claim 28wherein the first conductive wiring layer comprises conductively dopedsilicon.
 30. The method of claim 28 wherein the first conductive wiringlayer comprises silicon conductively doped with n-type dopant.
 31. Themethod of claim 28 wherein the first conductive wiring layer onlypartially fills the trenches, and wherein the porous silicon is formedwithin the partially filled trenches.
 32. The method of claim 26 whereinthe active molecular switchable memory material comprises a redox-activecatenane.
 33. The method of claim 26 wherein the active molecularswitchable memory material comprises a redox-active rotaxane.
 34. Themethod of claim 26 wherein the active molecular switchable memorymaterial comprises a redox-active pseudorotaxane.
 35. The method ofclaim 26 wherein the providing the active molecular switchable memorymaterial within the pores of the porous silicon comprises: forming amixture of the active molecular switchable memory material within aliquid carrier; providing the mixture within the pores of the poroussilicon; and volatilizing at least some of the carrier from within thepores to leave the active molecular switchable memory material remainingwithin the pores.
 36. The method of claim 35 wherein the providing themixture within the pores of the porous silicon comprises dipping theporous silicon into the mixture.
 37. A method of forming a semiconductorconstruction, comprising: providing a semiconductor substrate; formingan electrically insulative material over the semiconductor substrate;forming trenches extending into the electrically insulative material;forming a first conductive wiring layer within the trenches to partiallyfill the trenches; forming porous silicon over the first conductivewiring layer within the trenches; providing an active molecularswitchable memory material within pores of the porous silicon; forming aplanarized upper surface extending across an uppermost portion of theporous silicon and across an uppermost portion of the insulativematerial; and forming a second conductive wiring layer over theplanarized upper surface.
 38. The method of claim 37 wherein the formingthe planarized upper surface occurs after providing the active molecularswitchable memory material within pores of the porous silicon.
 39. Themethod of claim 37 wherein the forming the planarized upper surfaceoccurs before providing the active molecular switchable memory materialwithin pores of the porous silicon.
 40. The method of claim 37 whereinthe forming the planarized upper surface comprises chemical-mechanicalpolishing.
 41. The method of claim 37 wherein the first conductivewiring layer defines lines extending primarily along a first directionwithin the trenches; and wherein the second conductive wiring layer isformed in a shape of a line extending primarily along a second directionsubstantially perpendicular to the first direction.
 42. The method ofclaim 37 wherein the active molecular switchable memory materialcomprises a redox-active catenane.
 43. The method of claim 37 whereinthe active molecular switchable memory material comprises a redox-activerotaxane.
 44. The method of claim 37 wherein the active molecularswitchable memory material comprises a redox-active pseudorotaxane. 45.The method of claim 37 wherein the first conductive wiring layercomprises conductively doped silicon.
 46. The method of claim 37 whereinthe first conductive wiring layer comprises silicon conductively dopedwith n-type dopant.